RdsOn(Max)@Id | 2V @ 250µA |
---|---|
Vgs(th)(Max)@Id | 1080 pF @ 25 V |
Vgs | ±20V |
FETFeature | -55°C ~ 150°C (TJ) |
DraintoSourceVoltage(Vdss) | 200 V |
OperatingTemperature | TO-252AA |
DriveVoltage(MaxRdsOn | 5V, 10V |
ProductStatus | Not For New Designs |
Package/Case | Automotive |
GateCharge(Qg)(Max)@Vgs | AEC-Q101 |
Grade | |
MountingType | TO-252-3, DPak (2 Leads + Tab), SC-63 |
InputCapacitance(Ciss)(Max)@Vds | 2.5W (Ta), 55W (Tc) |
Series | QFET® |
Qualification | |
SupplierDevicePackage | 21 nC @ 5 V |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 9A (Tc) |
Vgs(Max) | - |
MinRdsOn) | 280mOhm @ 4.5A, 10V |
Package | Tape & Reel (TR) |
PowerDissipation(Max) | Surface Mount |
ON Semiconductor
Power Field-Effect Transistor, 9.4A I(D), 100V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET