Continuous Drain Current (Id) | 10A |
---|---|
Input Capacitance (Ciss@Vds) | 240pF@25V |
Operating Temperature | -55u2103~+150u2103@(Tj) |
Type | Nu6c9fu9053 |
Drain Source Voltage (Vdss) | 60V |
Power Dissipation (Pd) | 28W |
Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
Reverse Transfer Capacitance (Crss@Vds) | 15pF@25V |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 110mu03a9@10V,5A |
Total Gate Charge (Qg@Vgs) | 5.8nC@10V |
ON Semiconductor
Power Field-Effect Transistor, 9.4A I(D), 100V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET