RdsOn(Max)@Id | 4V @ 250µA |
---|---|
Vgs(th)(Max)@Id | ±30V |
Vgs | 27 nC @ 10 V |
FETFeature | 2.5W (Ta), 50W (Tc) |
DraintoSourceVoltage(Vdss) | 100 V |
OperatingTemperature | Surface Mount |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Obsolete |
Package/Case | |
GateCharge(Qg)(Max)@Vgs | |
Grade | |
MountingType | TO-252AA |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | QFET® |
Qualification | |
SupplierDevicePackage | TO-252-3, DPak (2 Leads + Tab), SC-63 |
FETType | P-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 9.4A (Tc) |
Vgs(Max) | 800 pF @ 25 V |
MinRdsOn) | 290mOhm @ 4.7A, 10V |
Package | Tape & Reel (TR) |
PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
ON Semiconductor
Power Field-Effect Transistor, 9.4A I(D), 100V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET