Max Operating Temperature | 150 °C |
---|---|
Drain to Source Voltage (Vdss) | 30 V |
Power Dissipation | 1.3 W |
Continuous Drain Current (ID) | 6.5 A |
Threshold Voltage | 1.8 V |
REACH SVHC | No SVHC |
Number of Pins | 8 |
RoHS | Compliant |
Case/Package | SOIC |
Max Power Dissipation | 1.3 W |
VISHAY
Small Signal Field-Effect Transistor, 5.7A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
VISHAY
Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
VISHAY
Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8