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| Min Operating Temperature | -55 °C |
|---|---|
| Gate to Source Voltage (Vgs) | 20 V |
| Fall Time | 18 ns |
| Turn-On Delay Time | 15 ns |
| RoHS | Non-Compliant |
| Weight | 186.993455 mg |
| Max Operating Temperature | 150 °C |
| Drain to Source Voltage (Vdss) | 30 V |
| Power Dissipation | 2.5 W |
| Drain to Source Resistance | 13.5 mΩ |
| Continuous Drain Current (ID) | 10 A |
| Element Configuration | Single |
| Rise Time | 8 ns |
| Number of Channels | 1 |
| Length | 5 mm |
| Turn-Off Delay Time | 45 ns |
| Height | 1.55 mm |
| Width | 4 mm |
| Case/Package | SO |
| Max Power Dissipation | 2.5 W |
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Small Signal Field-Effect Transistor, 5.7A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
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Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
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Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
