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| Min Operating Temperature | -55 °C |
|---|---|
| Drain to Source Breakdown Voltage | 30 V |
| Gate to Source Voltage (Vgs) | 25 V |
| Fall Time | 9 ns |
| RoHS | Non-Compliant |
| Max Operating Temperature | 150 °C |
| Power Dissipation | 2.5 W |
| Drain to Source Resistance | 18.5 mΩ |
| Continuous Drain Current (ID) | 9 A |
| Element Configuration | Single |
| Rise Time | 8 ns |
| Turn-Off Delay Time | 22 ns |
| Number of Pins | 8 |
| Case/Package | SOIC |
VISHAY
Small Signal Field-Effect Transistor, 5.7A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
VISHAY
Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
VISHAY
Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
