Min Operating Temperature | -55 °C |
---|---|
Gate to Source Voltage (Vgs) | 20 V |
Fall Time | 10 ns |
Turn-On Delay Time | 8 ns |
RoHS | Non-Compliant |
Weight | 84.99187 mg |
Max Operating Temperature | 150 °C |
Drain to Source Voltage (Vdss) | 30 V |
Power Dissipation | 1.1 W |
Drain to Source Resistance | 22 mΩ |
Continuous Drain Current (ID) | 5.7 A |
Element Configuration | Dual |
Rise Time | 10 ns |
Number of Channels | 2 |
Turn-Off Delay Time | 21 ns |
Case/Package | SO |
Max Power Dissipation | 1.1 W |
VISHAY
Small Signal Field-Effect Transistor, 5.7A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
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Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
VISHAY
Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8