Min Operating Temperature | -55 °C |
---|---|
Gate to Source Voltage (Vgs) | 8 V |
Mount | Surface Mount |
Fall Time | 3.7 ns |
Turn-On Delay Time | 7.5 ns |
RoHS | Compliant |
Max Operating Temperature | 150 °C |
Drain to Source Voltage (Vdss) | 20 V |
Continuous Drain Current (ID) | 2.3 A |
Rise Time | 9.9 ns |
Turn-Off Delay Time | 12 ns |
Number of Pins | 3 |
Input Capacitance | 529 pF |
Rds On Max | 57 mΩ |
Case/Package | TO-236-3 |
Max Power Dissipation | 500 mW |
Infineon
Small Signal Field-Effect Transistor, 1.4A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
INFINEON
Small Signal Field-Effect Transistor, 0.33A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-3
Diodes Incorporated
Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3