RdsOn(Max)@Id | 3.57 nC @ 10 V |
---|---|
Vgs(th)(Max)@Id | - |
Vgs | 78 pF @ 25 V |
FETFeature | Surface Mount |
DraintoSourceVoltage(Vdss) | 60 V |
OperatingTemperature | TO-236-3, SC-59, SOT-23-3 |
DriveVoltage(MaxRdsOn | 2Ohm @ 330mA, 10V |
ProductStatus | Obsolete |
Package/Case | |
GateCharge(Qg)(Max)@Vgs | |
Grade | |
MountingType | 4.5V, 10V |
InputCapacitance(Ciss)(Max)@Vds | -55°C ~ 150°C (TJ) |
Series | SIPMOS® |
Qualification | |
SupplierDevicePackage | ±20V |
FETType | P-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 330mA (Ta) |
Vgs(Max) | 360mW (Ta) |
MinRdsOn) | 2V @ 80µA |
Package | Tape & Reel (TR),Cut Tape (CT),Digi-Reel® |
PowerDissipation(Max) | PG-SOT23 |
Infineon
Small Signal Field-Effect Transistor, 1.4A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
INFINEON
Small Signal Field-Effect Transistor, 0.33A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-3
Diodes Incorporated
Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3