RdsOn(Max)@Id | 2V @ 34µA |
---|---|
Vgs(th)(Max)@Id | ±20V |
Vgs | 1.3 nC @ 5 V |
FETFeature | 360mW (Ta) |
DraintoSourceVoltage(Vdss) | 50 V |
OperatingTemperature | Surface Mount |
DriveVoltage(MaxRdsOn | 5V |
ProductStatus | Obsolete |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | SOT-23-3 |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | - |
Qualification | |
SupplierDevicePackage | TO-236-3, SC-59, SOT-23-3 |
FETType | P-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 130mA (Ta) |
Vgs(Max) | 73 pF @ 25 V |
MinRdsOn) | 10Ohm @ 100mA, 5V |
Package | Tape & Reel (TR) |
PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
Infineon
Small Signal Field-Effect Transistor, 1.4A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
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Small Signal Field-Effect Transistor, 0.33A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-3
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Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3