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| RdsOn(Max)@Id | 2V @ 1mA |
|---|---|
| Vgs(th)(Max)@Id | 45 pF @ 25 V |
| Vgs | ±20V |
| FETFeature | -65°C ~ 150°C (TJ) |
| DraintoSourceVoltage(Vdss) | 50 V |
| OperatingTemperature | TO-236AB |
| DriveVoltage(MaxRdsOn | 10V |
| ProductStatus | Not For New Designs |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| MountingType | TO-236-3, SC-59, SOT-23-3 |
| InputCapacitance(Ciss)(Max)@Vds | 250mW (Tc) |
| Series | - |
| Qualification | |
| SupplierDevicePackage | - |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 130mA (Ta) |
| Vgs(Max) | - |
| MinRdsOn) | 10Ohm @ 130mA, 10V |
| Package | Tape & Reel (TR),Cut Tape (CT),Digi-Reel® |
| PowerDissipation(Max) | Surface Mount |
Infineon
Small Signal Field-Effect Transistor, 1.4A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
INFINEON
Small Signal Field-Effect Transistor, 0.33A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-3
Diodes Incorporated
Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
