RdsOn(Max)@Id | 2V @ 250µA |
---|---|
Vgs(th)(Max)@Id | ±20V |
Vgs | 1.77 nC @ 10 V |
FETFeature | 225mW (Ta) |
DraintoSourceVoltage(Vdss) | 50 V |
OperatingTemperature | Surface Mount |
DriveVoltage(MaxRdsOn | 5V, 10V |
ProductStatus | Active |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | SOT-23-3 |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | SOT-23 |
Qualification | |
SupplierDevicePackage | TO-236-3, SC-59, SOT-23-3 |
FETType | P-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 130mA (Ta) |
Vgs(Max) | 30 pF @ 5 V |
MinRdsOn) | 8Ohm @ 100mA, 10V |
Package | Tape & Reel (TR) |
PowerDissipation(Max) | -55°C ~ 150°C |
Infineon
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