Threshold Voltage | 4 V |
---|---|
REACH SVHC | No SVHC |
RoHS | Compliant |
Max Operating Temperature | 150 °C |
Drain to Source Voltage (Vdss) | 100 V |
Power Dissipation | 625 mW |
Drain to Source Resistance | 1 Ω |
Continuous Drain Current (ID) | 640 mA |
Voltage | 100 V |
Packaging | Cut Tape |
Number of Pins | 3 |
Current | 8 A |
Case/Package | SOT-23 |
Max Power Dissipation | 625 mW |
Diodes Incorporated
Power Field-Effect Transistor, 2A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN