RdsOn(Max)@Id | 2.5V @ 250µA |
---|---|
Vgs(th)(Max)@Id | ±20V |
Vgs | 8.1 nC @ 5 V |
FETFeature | 2.2W (Ta) |
DraintoSourceVoltage(Vdss) | 200 V |
OperatingTemperature | Surface Mount |
DriveVoltage(MaxRdsOn | 5V, 10V |
ProductStatus | Active |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | TO-252-3 |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | - |
Qualification | |
SupplierDevicePackage | TO-252-3, DPak (2 Leads + Tab), SC-63 |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 1.5A (Ta) |
Vgs(Max) | 358 pF @ 25 V |
MinRdsOn) | 750mOhm @ 2.75A, 10V |
Package | Tape & Reel (TR),Cut Tape (CT),Digi-Reel® |
PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
Diodes Incorporated
Power Field-Effect Transistor, 2A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN