Copyright © 2021 Reliable Distributor of Electronic Components - augswan.com
E-mail: sale@augswan.com
Address: 1305 Room，HuangYuYuan, Futian Street, Shenzhen, China 518031
| RdsOn(Max)@Id | - |
|---|---|
| Vgs(th)(Max)@Id | - |
| Vgs | - |
| FETFeature | - |
| DraintoSourceVoltage(Vdss) | N-Channel |
| OperatingTemperature | Surface Mount |
| DriveVoltage(MaxRdsOn | 1.4A (Ta) |
| ProductStatus | Active |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| MountingType | SOT-23-3 |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | - |
| Qualification | |
| SupplierDevicePackage | TO-236-3, SC-59, SOT-23-3 |
| FETType | MOSFET (Metal Oxide) |
| Technology | - |
| Current-ContinuousDrain(Id)@25°C | - |
| Vgs(Max) | - |
| MinRdsOn) | - |
| Package | Tape & Reel (TR) |
| PowerDissipation(Max) | - |
Diodes Incorporated
Power Field-Effect Transistor, 2A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN
