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| RdsOn(Max)@Id | 4V @ 250µA |
|---|---|
| Vgs(th)(Max)@Id | ±20V |
| Vgs | 7.7 nC @ 10 V |
| FETFeature | 1.1W (Ta) |
| DraintoSourceVoltage(Vdss) | 100 V |
| OperatingTemperature | Surface Mount |
| DriveVoltage(MaxRdsOn | 6V, 10V |
| ProductStatus | Active |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| MountingType | SOT-26 |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | - |
| Qualification | |
| SupplierDevicePackage | SOT-23-6 |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 1.5A (Ta) |
| Vgs(Max) | 405 pF @ 50 V |
| MinRdsOn) | 250mOhm @ 3.2A, 10V |
| Package | Tape & Reel (TR) |
| PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
Diodes Incorporated
Power Field-Effect Transistor, 2A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN
