Copyright © 2021 Reliable Distributor of Electronic Components - augswan.com
E-mail: sale@augswan.com
Address: 1305 Room，HuangYuYuan, Futian Street, Shenzhen, China 518031
| RdsOn(Max)@Id | 700mV @ 250µA (Min) |
|---|---|
| Vgs(th)(Max)@Id | 303 pF @ 15 V |
| Vgs | ±12V |
| FETFeature | -55°C ~ 150°C (TJ) |
| DraintoSourceVoltage(Vdss) | 20 V |
| OperatingTemperature | SOT-23-3 |
| DriveVoltage(MaxRdsOn | 2.5V, 4.5V |
| ProductStatus | Obsolete |
| Package/Case | |
| GateCharge(Qg)(Max)@Vgs | |
| Grade | |
| MountingType | TO-236-3, SC-59, SOT-23-3 |
| InputCapacitance(Ciss)(Max)@Vds | 625mW (Ta) |
| Series | - |
| Qualification | |
| SupplierDevicePackage | 3 nC @ 4.5 V |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 1.9A (Ta) |
| Vgs(Max) | - |
| MinRdsOn) | 120mOhm @ 4A, 4.5V |
| Package | Tape & Reel (TR) |
| PowerDissipation(Max) | Surface Mount |
Diodes Incorporated
Power Field-Effect Transistor, 2A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN
