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| RdsOn(Max)@Id | 100mOhm @ 1.8A, 10V |
|---|---|
| Vgs(th)(Max)@Id | 15nC @ 10V |
| Vgs | 3V @ 250µA |
| Configuration | 2 N-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 20V |
| OperatingTemperature | Surface Mount |
| ProductStatus | Obsolete |
| Package/Case | 8-SO |
| GateCharge(Qg)(Max)@Vgs | 320pF @ 15V |
| Grade | |
| MountingType | 8-SOIC (0.154, 3.90mm Width) |
| InputCapacitance(Ciss)(Max)@Vds | 2W |
| Series | HEXFET® |
| Qualification | |
| SupplierDevicePackage | |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 3.5A |
| Package | Tape & Reel (TR) |
| Power-Max | -55°C ~ 150°C (TJ) |
International Rectifier
Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8, 8 PIN
