Continuous Drain Current (Id) | 2.3A |
---|---|
Type | 2u4e2aPu6c9fu9053 |
Drain Source Voltage (Vdss) | 20V |
Power Dissipation (Pd) | 2W |
Gate Threshold Voltage (Vgs(th)@Id) | 3V@250u03bcA |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 250mu03a9@10V,1A |
International Rectifier
Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8, 8 PIN