RdsOn(Max)@Id | 17 nC @ 10 V |
---|---|
Vgs(th)(Max)@Id | - |
Vgs | 170 pF @ 25 V |
FETFeature | Through Hole |
DraintoSourceVoltage(Vdss) | 400 V |
OperatingTemperature | TO-262-3 Long Leads, I2PAK, TO-262AA |
DriveVoltage(MaxRdsOn | 3.6Ohm @ 1.2A, 10V |
ProductStatus | Obsolete |
Package/Case | |
GateCharge(Qg)(Max)@Vgs | |
Grade | |
MountingType | 10V |
InputCapacitance(Ciss)(Max)@Vds | -55°C ~ 150°C (TJ) |
Series | - |
Qualification | |
SupplierDevicePackage | ±20V |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 2A (Tc) |
Vgs(Max) | - |
MinRdsOn) | 4V @ 250µA |
Package | Tube |
PowerDissipation(Max) | I2PAK |
International Rectifier
Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8, 8 PIN