Min Operating Temperature | -55 °C |
---|---|
Gate to Source Voltage (Vgs) | 20 V |
Mount | Surface Mount |
Fall Time | 25 ns |
Turn-On Delay Time | 9 ns |
RoHS | Compliant |
Radiation Hardening | No |
Max Operating Temperature | 150 °C |
Power Dissipation | 2 W |
Continuous Drain Current (ID) | 3 A |
Rise Time | 8 ns |
Turn-Off Delay Time | 45 ns |
Packaging | Tape and Reel |
Number of Pins | 8 |
Number of Elements | 2 |
Case/Package | SOIC |
International Rectifier
Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8, 8 PIN