RdsOn(Max)@Id | 4V @ 250µA |
---|---|
Vgs(th)(Max)@Id | ±20V |
Vgs | 17 nC @ 10 V |
FETFeature | 3.1W (Ta), 36W (Tc) |
DraintoSourceVoltage(Vdss) | 400 V |
OperatingTemperature | Surface Mount |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Active |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | TO-263 (D2PAK) |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | - |
Qualification | |
SupplierDevicePackage | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 2A (Tc) |
Vgs(Max) | 170 pF @ 25 V |
MinRdsOn) | 3.6Ohm @ 1.2A, 10V |
Package | Tube |
PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
International Rectifier
Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8, 8 PIN