Min Operating Temperature | -55 °C |
---|---|
Nominal Vgs | 3 V |
Gate to Source Voltage (Vgs) | 20 V |
Threshold Voltage | 3 V |
REACH SVHC | No SVHC |
Mount | Surface Mount |
Termination | SMD/SMT |
RoHS | Compliant |
Radiation Hardening | No |
Resistance | 100 mΩ |
Max Operating Temperature | 150 °C |
Drain to Source Voltage (Vdss) | 25 V |
Power Dissipation | 2 W |
Drain to Source Resistance | 83 mΩ |
Continuous Drain Current (ID) | 3.5 A |
Element Configuration | Dual |
Length | 4.9784 mm |
Turn-Off Delay Time | 45 ns |
Number of Pins | 8 |
Height | 1.4986 mm |
Input Capacitance | 290 pF |
Width | 3.9878 mm |
Case/Package | SO |
Max Power Dissipation | 2 W |
International Rectifier
Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8, 8 PIN