RdsOn(Max)@Id | ±30V |
---|---|
Vgs(th)(Max)@Id | 36W (Tc) |
Vgs | - |
FETFeature | TO-220 |
DraintoSourceVoltage(Vdss) | 2A (Tc) |
OperatingTemperature | 400 V |
DriveVoltage(MaxRdsOn | 3.4Ohm @ 1A, 10V |
ProductStatus | Active |
Package/Case | |
GateCharge(Qg)(Max)@Vgs | |
Grade | |
MountingType | 10 nC @ 10 V |
InputCapacitance(Ciss)(Max)@Vds | Through Hole |
Series | - |
Qualification | |
SupplierDevicePackage | 330 pF @ 25 V |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 10V |
Vgs(Max) | -55°C ~ 150°C (TJ) |
MinRdsOn) | 4V @ 250µA |
Package | Bulk |
PowerDissipation(Max) | TO-220-3 |
International Rectifier
Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8, 8 PIN