RdsOn(Max)@Id | 125mOhm @ 1A, 10V |
---|---|
Vgs(th)(Max)@Id | 25nC @ 10V |
Vgs | 1V @ 250µA |
Configuration | - |
FETFeature | N and P-Channel |
DraintoSourceVoltage(Vdss) | 20V |
OperatingTemperature | Surface Mount |
ProductStatus | Obsolete |
Package/Case | 8-SO |
GateCharge(Qg)(Max)@Vgs | 300pF @ 15V |
Grade | - |
MountingType | 8-SOIC (0.154, 3.90mm Width) |
InputCapacitance(Ciss)(Max)@Vds | 2W |
Series | HEXFET® |
Qualification | |
SupplierDevicePackage | - |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 3A, 2.5A |
Package | Tube |
Power-Max | - |
International Rectifier
Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8, 8 PIN