Voltage-CollectorEmitterBreakdown(Max) | 650 V |
---|---|
SwitchingEnergy | 1.06mJ (on), 1.14mJ (off) |
OperatingTemperature | -55°C ~ 175°C (TJ) |
ProductStatus | Active |
Package/Case | - |
Grade | Through Hole |
MountingType | TO-247-4 |
ReverseRecoveryTime(trr) | |
Current-CollectorPulsed(Icm) | - |
Series | HB2 |
Td(on/off)@25°C | 23ns/141ns |
Qualification | TO-247-4 |
SupplierDevicePackage | - |
InputType | Standard |
Vce(on)(Max)@Vge | 300 A |
GateCharge | 288 nC |
Current-Collector(Ic)(Max) | 145 A |
Ic | 1.8V @ 15V, 100A |
TestCondition | 400V, 100A, 3.3Ohm, 15V |
Package | Tube |
Power-Max | 441 W |
IGBTType | Trench Field Stop |
STMicroelectronics
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247