Voltage-CollectorEmitterBreakdown(Max) | 900 V |
---|---|
SwitchingEnergy | Standard |
OperatingTemperature | Through Hole |
ProductStatus | Obsolete |
Package/Case | 152 ns |
Grade | TO-247-3 |
MountingType | 135 A |
ReverseRecoveryTime(trr) | |
Current-CollectorPulsed(Icm) | |
Series | PowerMESH™ |
Td(on/off)@25°C | 900V, 20A, 10Ohm, 15V |
Qualification | TO-247-3 |
SupplierDevicePackage | |
InputType | 110 nC |
Vce(on)(Max)@Vge | 2.75V @ 15V, 20A |
GateCharge | 29ns/275ns |
Current-Collector(Ic)(Max) | 60 A |
Ic | 220 W |
TestCondition | -55°C ~ 150°C (TJ) |
Package | Tube |
Power-Max | 1.66mJ (on), 4.44mJ (off) |
IGBTType | - |
STMicroelectronics
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247