Voltage-CollectorEmitterBreakdown(Max) | 600 V |
---|---|
SwitchingEnergy | 200µJ (on), 130µJ (off) |
OperatingTemperature | - |
ProductStatus | Active |
Package/Case | TO-247 |
Grade | -55°C ~ 175°C (TJ) |
MountingType | TO-247-3 |
ReverseRecoveryTime(trr) | |
Current-CollectorPulsed(Icm) | - |
Series | - |
Td(on/off)@25°C | 38ns/149ns |
Qualification | Through Hole |
SupplierDevicePackage | - |
InputType | Standard |
Vce(on)(Max)@Vge | 80 A |
GateCharge | 116 nC |
Current-Collector(Ic)(Max) | 40 A |
Ic | 2.2V @ 15V, 20A |
TestCondition | 400V, 20A, 15V |
Package | Tube |
Power-Max | 167 W |
IGBTType | Trench Field Stop |
STMicroelectronics
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247