Voltage-CollectorEmitterBreakdown(Max) | 1200 V |
---|---|
SwitchingEnergy | 1.66mJ (on), 4.44mJ (off) |
OperatingTemperature | -55°C ~ 150°C (TJ) |
ProductStatus | Active |
Package/Case | 152 ns |
Grade | Through Hole |
MountingType | TO-247-3 |
ReverseRecoveryTime(trr) | |
Current-CollectorPulsed(Icm) | - |
Series | PowerMESH™ |
Td(on/off)@25°C | 29ns/275ns |
Qualification | TO-247-3 |
SupplierDevicePackage | - |
InputType | Standard |
Vce(on)(Max)@Vge | - |
GateCharge | 110 nC |
Current-Collector(Ic)(Max) | 60 A |
Ic | 2.75V @ 15V, 20A |
TestCondition | 960V, 20A, 10Ohm, 15V |
Package | Tube |
Power-Max | 220 W |
IGBTType | - |
STMicroelectronics
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247