Voltage-CollectorEmitterBreakdown(Max) | 600 V |
---|---|
SwitchingEnergy | Standard |
OperatingTemperature | Through Hole |
ProductStatus | Obsolete |
Package/Case | 31 ns |
Grade | TO-247-3 |
MountingType | - |
ReverseRecoveryTime(trr) | |
Current-CollectorPulsed(Icm) | |
Series | PowerMESH™ |
Td(on/off)@25°C | 390V, 12A, 10Ohm, 15V |
Qualification | TO-247-3 |
SupplierDevicePackage | |
InputType | 53 nC |
Vce(on)(Max)@Vge | 2.5V @ 15V, 12A |
GateCharge | 25ns/90ns |
Current-Collector(Ic)(Max) | 42 A |
Ic | 125 W |
TestCondition | -55°C ~ 150°C (TJ) |
Package | Tube |
Power-Max | 81µJ (on), 125µJ (off) |
IGBTType | - |
STMicroelectronics
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247