Voltage-CollectorEmitterBreakdown(Max) | 650 V |
---|---|
SwitchingEnergy | Standard |
OperatingTemperature | - |
ProductStatus | Active |
Package/Case | TO-247-3 |
Grade | - |
MountingType | TO-247-3 |
ReverseRecoveryTime(trr) | |
Current-CollectorPulsed(Icm) | 140 ns |
Series | - |
Td(on/off)@25°C | 400V, 30A, 10Ohm, 15V |
Qualification | Through Hole |
SupplierDevicePackage | 120 A |
InputType | 80 nC |
Vce(on)(Max)@Vge | 2V @ 15V, 30A |
GateCharge | 31.6ns/115ns |
Current-Collector(Ic)(Max) | 60 A |
Ic | 258 W |
TestCondition | -55°C ~ 175°C (TJ) |
Package | Tube |
Power-Max | 300µJ (on), 960µJ (off) |
IGBTType | Trench Field Stop |
STMicroelectronics
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247