Voltage-CollectorEmitterBreakdown(Max) | 600 V |
---|---|
SwitchingEnergy | Standard |
OperatingTemperature | TO-247-3 |
ProductStatus | Obsolete |
Package/Case | 120 A |
Grade | TO-247 |
MountingType | 110 ns |
ReverseRecoveryTime(trr) | |
Current-CollectorPulsed(Icm) | |
Series | - |
Td(on/off)@25°C | -40°C ~ 175°C (TJ) |
Qualification | 105 nC |
SupplierDevicePackage | |
InputType | 50ns/160ns |
Vce(on)(Max)@Vge | 2.4V @ 15V, 30A |
GateCharge | 400V, 30A, 10Ohm, 15V |
Current-Collector(Ic)(Max) | 60 A |
Ic | 260 W |
TestCondition | Through Hole |
Package | Tube |
Power-Max | 350µJ (on), 400µJ (off) |
IGBTType | Trench Field Stop |
STMicroelectronics
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247