Voltage-CollectorEmitterBreakdown(Max) | 1200 V |
---|---|
SwitchingEnergy | 540µJ (on), 1.38mJ (off) |
OperatingTemperature | -55°C ~ 175°C (TJ) |
ProductStatus | Obsolete |
Package/Case | 270 ns |
Grade | Through Hole |
MountingType | TO-247-3 |
ReverseRecoveryTime(trr) | |
Current-CollectorPulsed(Icm) | - |
Series | - |
Td(on/off)@25°C | 23ns/140ns |
Qualification | TO-247-3 |
SupplierDevicePackage | - |
InputType | Standard |
Vce(on)(Max)@Vge | 60 A |
GateCharge | 53 nC |
Current-Collector(Ic)(Max) | 30 A |
Ic | 2.05V @ 15V, 15A |
TestCondition | 600V, 15A, 22Ohm, 15V |
Package | Tube |
Power-Max | 259 W |
IGBTType | Trench Field Stop |
STMicroelectronics
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247