Voltage-CollectorEmitterBreakdown(Max) | 600 V |
---|---|
SwitchingEnergy | 840µJ (on), 7.4mJ (off) |
OperatingTemperature | -55°C ~ 150°C (TJ) |
ProductStatus | Obsolete |
Package/Case | 44 ns |
Grade | Through Hole |
MountingType | TO-247-3 |
ReverseRecoveryTime(trr) | |
Current-CollectorPulsed(Icm) | |
Series | PowerMESH™ |
Td(on/off)@25°C | 92ns/1.1µs |
Qualification | TO-247-3 |
SupplierDevicePackage | |
InputType | Standard |
Vce(on)(Max)@Vge | 250 A |
GateCharge | 83 nC |
Current-Collector(Ic)(Max) | 70 A |
Ic | 1.7V @ 15V, 20A |
TestCondition | 480V, 20A, 100Ohm, 15V |
Package | Tube |
Power-Max | 200 W |
IGBTType | - |
STMicroelectronics
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247