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| Voltage-CollectorEmitterBreakdown(Max) | 600 V |
|---|---|
| SwitchingEnergy | Standard |
| OperatingTemperature | - |
| ProductStatus | Active |
| Package/Case | TO-247-3 |
| Grade | - |
| MountingType | TO-247-3 |
| ReverseRecoveryTime(trr) | |
| Current-CollectorPulsed(Icm) | - |
| Series | PowerMESH™ |
| Td(on/off)@25°C | 390V, 20A, 3.3Ohm, 15V |
| Qualification | Through Hole |
| SupplierDevicePackage | 100 A |
| InputType | 100 nC |
| Vce(on)(Max)@Vge | 2.5V @ 15V, 20A |
| GateCharge | 31ns/100ns |
| Current-Collector(Ic)(Max) | 60 A |
| Ic | 200 W |
| TestCondition | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Power-Max | 220µJ (on), 330µJ (off) |
| IGBTType | - |
STMicroelectronics
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247
